C1815 transistor (npn) features power dissipation p cm: 0.4 w (tamb=25 ) collector current i cm: 0.15 a collector-base voltage v (br)cbo : 60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100 a, i e =0 60 v collector-emitter breakdown voltage v(br) ceo ic= 0. 1 ma, i b =0 50 v emitter-base breakdown voltage v(br) ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 60v, i e =0 0.1 a collector cut-off current i ceo v ce = 50v, i b =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a dc current gain h fe(1) v ce = 6v, i c = 2ma 70 700 collector-emitter saturation voltage v ce (sat) i c = 100ma, i b = 10 ma 0.25 v base-emitter saturation voltage v be (sat) i c = 100 ma, i b = 10ma 1 v transition frequency f t v ce = 10 v, i c = 1ma f= 30mhz 80 mhz classification of h fe(1) rank o y gr bl range 70-140 120-240 200-400 350-700 1 2 3 to-92 1. emitter 2. collector 3. base C1815 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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